Resonant Defect States and Strong Lattice Relaxation of Oxygen Vacancies in WO3: Article No. 233204

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.68.233204
State	Published - 2003

NREL Publication Number

@article{e07df4658e46426cba4cc99ef1d37b8a,

title = "Resonant Defect States and Strong Lattice Relaxation of Oxygen Vacancies in WO3: Article No. 233204",

keywords = "band gap, defect states, semiconductors",

author = "NREL",

year = "2003",

doi = "10.1103/PhysRevB.68.233204",

language = "American English",

volume = "68",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "23",

}

TY - JOUR

T1 - Resonant Defect States and Strong Lattice Relaxation of Oxygen Vacancies in WO3

T2 - Article No. 233204

AU - NREL, null

PY - 2003

Y1 - 2003

KW - band gap

KW - defect states

KW - semiconductors

U2 - 10.1103/PhysRevB.68.233204

DO - 10.1103/PhysRevB.68.233204

M3 - Article

SN - 1098-0121

VL - 68

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

ER -