Resonant Raman Scattering Spectroscopy of GaP1-xNx and GaAs1-xNx in the Ultraviolet Range

S. Yoon; J. F. Geisz; Sung Ho Han; A. Mascarenhas; M. Rübhausen; B. Schulz

doi:10.1103/PhysRevB.71.155208

Resonant Raman Scattering Spectroscopy of GaP1-xNx and GaAs1-xNx in the Ultraviolet Range

S. Yoon, J. F. Geisz, Sung Ho Han, A. Mascarenhas, M. Rübhausen, B. Schulz

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

Original language	American English
Article number	Article No. 155208
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	71
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.71.155208 https://doi.org/10.1103/PhysRevB.71.155208
State	Published - 2005

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NREL/JA-590-38429

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@article{5d5fd76b27fd4ffea918aa3c90754550,

title = "Resonant Raman Scattering Spectroscopy of GaP1-xNx and GaAs1-xNx in the Ultraviolet Range",

abstract = "We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.",

author = "S. Yoon and Geisz, {J. F.} and Han, {Sung Ho} and A. Mascarenhas and M. R{\"u}bhausen and B. Schulz",

year = "2005",

doi = "10.1103/PhysRevB.71.155208",

language = "American English",

volume = "71",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

TY - JOUR

T1 - Resonant Raman Scattering Spectroscopy of GaP1-xNx and GaAs1-xNx in the Ultraviolet Range

AU - Yoon, S.

AU - Geisz, J. F.

AU - Han, Sung Ho

AU - Mascarenhas, A.

AU - Rübhausen, M.

AU - Schulz, B.

PY - 2005

Y1 - 2005

N2 - We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

AB - We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.

UR - http://www.scopus.com/inward/record.url?scp=28644441306&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.155208

DO - 10.1103/PhysRevB.71.155208

M3 - Article

AN - SCOPUS:28644441306

SN - 1098-0121

VL - 71

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - Article No. 155208

ER -

Resonant Raman Scattering Spectroscopy of GaP1-xNx and GaAs1-xNx in the Ultraviolet Range

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