Abstract
We report resonant Raman scattering studies of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L -point conduction-band edges of Ga P1-x Nx and Ga As1-x Nx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys.
Original language | American English |
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Article number | Article No. 155208 |
Number of pages | 5 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 71 |
Issue number | 15 |
DOIs | |
State | Published - 2005 |
NREL Publication Number
- NREL/JA-590-38429