Resonant Raman Study on the Nitrogen-Induced Electronic States in GaAs1-xNx

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	217-222
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	45
Issue number	1
State	Published - 2004

NREL Publication Number

@article{a61e1a4c5ff84e198bf3e45d049785ce,

title = "Resonant Raman Study on the Nitrogen-Induced Electronic States in GaAs1-xNx",

author = "NREL",

year = "2004",

language = "American English",

volume = "45",

pages = "217--222",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}