Resonant State Due to Bi in the Dilute Bismide Alloy GaAs1-xBix

Aaron Ptak, Ryan France, R. Joshya, R. Kini, Angelo Mascarenhas

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13 Scopus Citations


It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs1-xBix. We present ultrafast pump-probe reflectivity measurements of this interesting alloy system, which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ∼ 860-900 nm have negative amplitude, which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi-resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ∼200 ps at 10 K.

Original languageAmerican English
Article numberArticle No. 165203
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - 16 Oct 2014

Bibliographical note

Publisher Copyright:
© 2014 American Physical Society.

NREL Publication Number

  • NREL/JA-5J00-63311


  • dilute bismide alloy
  • pump-probe reflectivity measurements


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