Resonant State Due to Bi in the Dilute Bismide Alloy GaAs1-xBix

It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs1-xBix. We present ultrafast pump-probe reflectivity measurements of this interesting alloy system, which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ∼ 860-900 nm have negative amplitude, which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi-resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ∼200 ps at 10 K.