Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration

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Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al0.18Ga0.33In0.49P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. The electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.

Original languageAmerican English
Article number8936684
Pages (from-to)487-494
Number of pages8
JournalIEEE Journal of Photovoltaics
Issue number2
StatePublished - 2020

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

  • NREL/JA-5900-74125


  • Concentration
  • Heterojunction
  • III-V solar cell
  • Series resistance


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