Reversible GaInP2 Surface Passivation by Water Adsorption: A Model System for Ambient-Dependent Photoluminescence

Todd Deutsch; John Turner; James Young; Henning Doscher

doi:10.1021/acs.jpcc.5b12498

Reversible GaInP2 Surface Passivation by Water Adsorption: A Model System for Ambient-Dependent Photoluminescence

Todd Deutsch, John Turner, James Young, Henning Doscher

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

The photoluminescence (PL) intensity of semiconductors can be modulated by their ambient. We show GaInP₂ to respond reversibly to water vapor, irreversibly to oxygen, and with a time dependence to air. We characterize the reversible PL response to water vapor in a set of steady-state measurements that reveal a systematic dependence on pressure. We derive a model for this behavior based on Langmuir adsorption and Shockley-Read-Hall recombination principles to describe how partial pressure controls luminescence. The expression for the GaInP₂/water vapor system shows excellent agreement to measurements. Combined, the PL monitoring technique and model demonstrate a quantitative approach for probing gas/surface defect interactions of semiconductor processing steps, luminescence-based sensors, and photocatalytic surfaces.

Original language	American English
Pages (from-to)	4418-4422
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	120
Issue number	8
DOIs	https://doi.org/10.1021/acs.jpcc.5b12498 https://doi.org/10.1021/acs.jpcc.5b12498
State	Published - 3 Mar 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

NREL Publication Number

NREL/JA-5900-65313

Keywords

adsorption model
semiconductor photoluminescence
Shockley-Read-Hall recombination
surface-state passivation

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title = "Reversible GaInP2 Surface Passivation by Water Adsorption: A Model System for Ambient-Dependent Photoluminescence",

abstract = "The photoluminescence (PL) intensity of semiconductors can be modulated by their ambient. We show GaInP2 to respond reversibly to water vapor, irreversibly to oxygen, and with a time dependence to air. We characterize the reversible PL response to water vapor in a set of steady-state measurements that reveal a systematic dependence on pressure. We derive a model for this behavior based on Langmuir adsorption and Shockley-Read-Hall recombination principles to describe how partial pressure controls luminescence. The expression for the GaInP2/water vapor system shows excellent agreement to measurements. Combined, the PL monitoring technique and model demonstrate a quantitative approach for probing gas/surface defect interactions of semiconductor processing steps, luminescence-based sensors, and photocatalytic surfaces.",

keywords = "adsorption model, semiconductor photoluminescence, Shockley-Read-Hall recombination, surface-state passivation",

author = "Todd Deutsch and John Turner and James Young and Henning Doscher",

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doi = "10.1021/acs.jpcc.5b12498",

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T1 - Reversible GaInP2 Surface Passivation by Water Adsorption: A Model System for Ambient-Dependent Photoluminescence

AU - Deutsch, Todd

AU - Turner, John

AU - Young, James

AU - Doscher, Henning

PY - 2016/3/3

Y1 - 2016/3/3

N2 - The photoluminescence (PL) intensity of semiconductors can be modulated by their ambient. We show GaInP2 to respond reversibly to water vapor, irreversibly to oxygen, and with a time dependence to air. We characterize the reversible PL response to water vapor in a set of steady-state measurements that reveal a systematic dependence on pressure. We derive a model for this behavior based on Langmuir adsorption and Shockley-Read-Hall recombination principles to describe how partial pressure controls luminescence. The expression for the GaInP2/water vapor system shows excellent agreement to measurements. Combined, the PL monitoring technique and model demonstrate a quantitative approach for probing gas/surface defect interactions of semiconductor processing steps, luminescence-based sensors, and photocatalytic surfaces.

AB - The photoluminescence (PL) intensity of semiconductors can be modulated by their ambient. We show GaInP2 to respond reversibly to water vapor, irreversibly to oxygen, and with a time dependence to air. We characterize the reversible PL response to water vapor in a set of steady-state measurements that reveal a systematic dependence on pressure. We derive a model for this behavior based on Langmuir adsorption and Shockley-Read-Hall recombination principles to describe how partial pressure controls luminescence. The expression for the GaInP2/water vapor system shows excellent agreement to measurements. Combined, the PL monitoring technique and model demonstrate a quantitative approach for probing gas/surface defect interactions of semiconductor processing steps, luminescence-based sensors, and photocatalytic surfaces.

KW - adsorption model

KW - semiconductor photoluminescence

KW - Shockley-Read-Hall recombination

KW - surface-state passivation

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DO - 10.1021/acs.jpcc.5b12498

M3 - Article

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JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 8

ER -

Reversible GaInP2 Surface Passivation by Water Adsorption: A Model System for Ambient-Dependent Photoluminescence

Abstract

Bibliographical note

NREL Publication Number

Keywords

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