Review of ZnSnN2 Semiconductor Material

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Abstract

Zinc tin nitride (ZnSnN2) is one of the emerging ternary nitride semiconductors considered for photovoltaic device applications due to its attractive and tunable material properties and earth abundance of constituent elements. Computational predictions of the material properties sparked experimental synthesis efforts, and currently there are a number of groups involved in ZnSnN2 research. In this article, we review the progress of research and development efforts in ZnSnN2 across the globe, and provide several highlights of accomplishments at the National Renewable Energy Laboratory (NREL). The interplay between computational predictions and experimental observations is discussed and exemplified by focusing on unintentional oxygen incorporation and the resulting changes in optical and electronic properties. The research progress over the past decade is summarized, and important future development directions are highlighted.

Original languageAmerican English
Article number032007
Number of pages14
JournalJPhys Energy
Volume2
Issue number3
DOIs
StatePublished - Jul 2020

Bibliographical note

Publisher Copyright:
© 2020 The Author(s). Published by IOP Publishing Ltd

NREL Publication Number

  • NREL/JA-5K00-75939

Keywords

  • Band gap
  • Density functional theory
  • Disorder
  • Doping
  • Nitride
  • Photovoltaic
  • Sputtering

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