Revisiting the Defect Physics in CuInSe2 and CuGaSe2

Research output: Contribution to conferencePaper

Abstract

Using first-principles self-consistent electronic structure theory, we have calculated defect formation energies and defect energy levels in CuInSe2. Contrary to previously accepted assumptions in the analysis of defects in CuInSe2 we nd that (i) it is much easier to form Cu vacancy in CuInSe2 than to form cation vacancies in II-VI's. (ii) Defect formation energies vary; considerably both withthe Fermi energy and the chemical potential of the atomic species, and (iii) Defect pairs such as (2VCu +InCu) have a remarkably low formation enthalpy. This explains the massive non-stoichiometry of CuInSe2 and the appearance of ordered defect compounds CuIn5Se8, CuIn3Se5, Cu2In4Se7 and Cu3In5Se9. The fact that CuInSe2 has good electrical properties despite this off-stoichiometry reflects themutual passivation of InCu by VCu.
Original languageAmerican English
Pages313-318
Number of pages6
DOIs
StatePublished - 1997
EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-450-23581

NREL Publication Number

  • NREL/CP-520-24951

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