TY - JOUR
T1 - rf Magnetron Sputter Deposition of Transparent Conducting Nb-Doped TiO2 Films on SrTiO3
AU - Gillispie, Meagen A.
AU - Van Hest, Maikel F.A.M.
AU - Dabney, Matthew S.
AU - Perkins, John D.
AU - Ginley, David S.
PY - 2007
Y1 - 2007
N2 - rf magnetron sputtering, an established and scalable large area deposition process, is used to deposit Nb:Ti O2 and Ta:Ti O2 films onto (100) SrTi O3 substrates at temperatures TS ranging from room temperature to 400 °C. Optical, electrical, and structural properties similar to those reported for pulsed laser deposition grown films were obtained. In particular, the most conducting Ti0.85 Nb0.15 O2 films, grown at TS ≈375 °C, are epitaxially oriented anatase films with conductivity of 3000 S cm-1, carrier concentration of 2.4× 1021 cm-3, Hall mobility of 7.6 cm2 V-1 s-1, and optical transparency T>80% from 400 to 900 nm. The conductivity is strongly correlated with the intensity of the anatase (004) x-ray diffraction peak.
AB - rf magnetron sputtering, an established and scalable large area deposition process, is used to deposit Nb:Ti O2 and Ta:Ti O2 films onto (100) SrTi O3 substrates at temperatures TS ranging from room temperature to 400 °C. Optical, electrical, and structural properties similar to those reported for pulsed laser deposition grown films were obtained. In particular, the most conducting Ti0.85 Nb0.15 O2 films, grown at TS ≈375 °C, are epitaxially oriented anatase films with conductivity of 3000 S cm-1, carrier concentration of 2.4× 1021 cm-3, Hall mobility of 7.6 cm2 V-1 s-1, and optical transparency T>80% from 400 to 900 nm. The conductivity is strongly correlated with the intensity of the anatase (004) x-ray diffraction peak.
UR - http://www.scopus.com/inward/record.url?scp=33847120261&partnerID=8YFLogxK
U2 - 10.1063/1.2434005
DO - 10.1063/1.2434005
M3 - Article
AN - SCOPUS:33847120261
SN - 0021-8979
VL - 101
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
M1 - Article No. 033125
ER -