Role of In-Situ Rapid Isothermal Processing (RIP) in the Metallization and Passivation of Indium Phosphide Devices

Role of In-Situ Rapid Isothermal Processing (RIP) in the Metallization and Passivation of Indium Phosphide Devices

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	423-428
Number of pages	6
State	Published - 1990
Event	Advanced Metallizations in Microelectronics: Materials Research Society Symposium - San Francisco, California Duration: 16 Apr 1990 → 20 Apr 1990

Conference

Conference	Advanced Metallizations in Microelectronics: Materials Research Society Symposium
City	San Francisco, California
Period	16/04/90 → 20/04/90

Bibliographical note

Work performed by University of Oklahoma, Norman, Oklahoma, AT&T Bell Laboratories, Murray Hill, New Jersey and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

ACNR/CP-14591

Cite this

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title = "Role of In-Situ Rapid Isothermal Processing (RIP) in the Metallization and Passivation of Indium Phosphide Devices",

author = "NREL",

note = "Work performed by University of Oklahoma, Norman, Oklahoma, AT\&T Bell Laboratories, Murray Hill, New Jersey and Solar Energy Research Institute, Golden, Colorado; Advanced Metallizations in Microelectronics: Materials Research Society Symposium ; Conference date: 16-04-1990 Through 20-04-1990",

year = "1990",

language = "American English",

pages = "423--428",

}

TY - CONF

T1 - Role of In-Situ Rapid Isothermal Processing (RIP) in the Metallization and Passivation of Indium Phosphide Devices

AU - NREL, null

N1 - Work performed by University of Oklahoma, Norman, Oklahoma, AT&T Bell Laboratories, Murray Hill, New Jersey and Solar Energy Research Institute, Golden, Colorado

PY - 1990

Y1 - 1990

M3 - Paper

SP - 423

EP - 428

T2 - Advanced Metallizations in Microelectronics: Materials Research Society Symposium

Y2 - 16 April 1990 through 20 April 1990

ER -