Role of Oxygen in Zone-Melting Recrystallization of Silicon-on-Insulator Films

John C.C. Fan; B. Y. Tsaur; C. K. Chen; J. R. Dick; L. L. Kazmerski

Role of Oxygen in Zone-Melting Recrystallization of Silicon-on-Insulator Films

John C.C. Fan, B. Y. Tsaur, C. K. Chen, J. R. Dick, L. L. Kazmerski

Massachusetts Institute of Technology

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

Using secondary-ion mass spectroscopy, it was found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO//2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO//2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

Original language	American English
Pages	477-489
Number of pages	13
State	Published - 1984
Externally published	Yes
Event	Energy Beam-Solid Interactions and Transient Thermal Processing: Materials Research Society Symposium - Boston, Massachusetts Duration: 1 Nov 1983 → 1 Nov 1983

Conference

Conference	Energy Beam-Solid Interactions and Transient Thermal Processing: Materials Research Society Symposium
City	Boston, Massachusetts
Period	1/11/83 → 1/11/83

Bibliographical note

Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-213-6064

Cite this

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title = "Role of Oxygen in Zone-Melting Recrystallization of Silicon-on-Insulator Films",

abstract = "Using secondary-ion mass spectroscopy, it was found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO//2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO//2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.",

author = "Fan, {John C.C.} and Tsaur, {B. Y.} and Chen, {C. K.} and Dick, {J. R.} and Kazmerski, {L. L.}",

note = "Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts, and Solar Energy Research Institute, Golden, Colorado; Energy Beam-Solid Interactions and Transient Thermal Processing: Materials Research Society Symposium ; Conference date: 01-11-1983 Through 01-11-1983",

year = "1984",

language = "American English",

pages = "477--489",

}

TY - CONF

T1 - Role of Oxygen in Zone-Melting Recrystallization of Silicon-on-Insulator Films

AU - Fan, John C.C.

AU - Tsaur, B. Y.

AU - Chen, C. K.

AU - Dick, J. R.

AU - Kazmerski, L. L.

N1 - Work performed by Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

PY - 1984

Y1 - 1984

N2 - Using secondary-ion mass spectroscopy, it was found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO//2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO//2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

AB - Using secondary-ion mass spectroscopy, it was found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO//2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO//2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

UR - http://www.scopus.com/inward/record.url?scp=0021581372&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0021581372

SP - 477

EP - 489

T2 - Energy Beam-Solid Interactions and Transient Thermal Processing: Materials Research Society Symposium

Y2 - 1 November 1983 through 1 November 1983

ER -

Role of Oxygen in Zone-Melting Recrystallization of Silicon-on-Insulator Films

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this