Role of Sb Compositions on the Properties of InAs/GaAsSb Quantum Dots (QDs)

Keun Yong Ban; Stephen P. Bremner; Darius Kuciauskas; Som N. Dahal; Christiana B. Honsberg

doi:10.1117/12.910834

Role of Sb Compositions on the Properties of InAs/GaAsSb Quantum Dots (QDs)

Keun Yong Ban, Stephen P. Bremner, Darius Kuciauskas, Som N. Dahal, Christiana B. Honsberg

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO, InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier lifetime estimated from TRPL data.

Original language	American English
Number of pages	6
DOIs	https://doi.org/10.1117/12.910834 https://doi.org/10.1117/12.910834
State	Published - 2012
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States Duration: 23 Jan 2012 → 26 Jan 2012

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Country/Territory	United States
City	San Francisco, CA
Period	23/01/12 → 26/01/12

NREL Publication Number

NREL/CP-5200-55324

Keywords

Atomic Force Microscopy
quantum wells
valance band offset

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title = "Role of Sb Compositions on the Properties of InAs/GaAsSb Quantum Dots (QDs)",

abstract = "QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO, InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier lifetime estimated from TRPL data.",

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author = "Ban, {Keun Yong} and Bremner, {Stephen P.} and Darius Kuciauskas and Dahal, {Som N.} and Honsberg, {Christiana B.}",

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note = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices ; Conference date: 23-01-2012 Through 26-01-2012",

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T1 - Role of Sb Compositions on the Properties of InAs/GaAsSb Quantum Dots (QDs)

AU - Ban, Keun Yong

AU - Bremner, Stephen P.

AU - Kuciauskas, Darius

AU - Dahal, Som N.

AU - Honsberg, Christiana B.

PY - 2012

Y1 - 2012

N2 - QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO, InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier lifetime estimated from TRPL data.

AB - QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO, InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier lifetime estimated from TRPL data.

KW - Atomic Force Microscopy

KW - quantum wells

KW - valance band offset

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Y2 - 23 January 2012 through 26 January 2012

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Role of Sb Compositions on the Properties of InAs/GaAsSb Quantum Dots (QDs)

Abstract

Conference

NREL Publication Number

Keywords

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