Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization

Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization

Research output: Contribution to conference › Paper

Original language	American English
Pages	183-188
Number of pages	6
State	Published - 1999
Event	Materials Research Society Symposium - San Francisco, California Duration: 5 Apr 1999 → 9 Apr 1999

Conference

Conference	Materials Research Society Symposium
City	San Francisco, California
Period	5/04/99 → 9/04/99

Bibliographical note

Work performed by California Institute of Technology, Pasadena, California and Washington State University, Pullman, Washington

NREL Publication Number

NREL/CP-520-28447

Cite this

@conference{c604da4a67084f3693b3e8323d5deeaa,

title = "Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization",

author = "NREL",

note = "Work performed by California Institute of Technology, Pasadena, California and Washington State University, Pullman, Washington; Materials Research Society Symposium ; Conference date: 05-04-1999 Through 09-04-1999",

year = "1999",

language = "American English",

pages = "183--188",

}

TY - CONF

T1 - Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization

AU - NREL, null

N1 - Work performed by California Institute of Technology, Pasadena, California and Washington State University, Pullman, Washington

PY - 1999

Y1 - 1999

M3 - Paper

SP - 183

EP - 188

T2 - Materials Research Society Symposium

Y2 - 5 April 1999 through 9 April 1999

ER -