Abstract
CdSeTe alloying has significantly increased the efficiency of CdTe-based solar technology. Here, computational modeling compares how different CdSeTe bandgrading, carrier lifetimes, band alignment, and carrier concentrations contribute to transport, recombination, and performance. We find that the gain in photocurrent caused by bandgap narrowing alone is insufficient to describe experimental efficiency gains. Performance can be increased by adjusting CdSeTe compositions and bandgrading depths. However, these performance gains are small relative to the contributions of enhanced lifetime by Se alloying, which can explain record cell efficiency gains with minimal open-circuit voltage loss despite significant bandgap narrowing. Similarly, CdSeTe band alignment shifts can significantly increase performance if front interface recombination is prevalent. For a wide range of CdSeTe grading profiles, the hole density is a critical component to achieve efficiencies exceeding 25%.
Original language | American English |
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Article number | 053102 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 128 |
Issue number | 5 |
DOIs | |
State | Published - 7 Aug 2020 |
Bibliographical note
Publisher Copyright:© 2020 Author(s).
NREL Publication Number
- NREL/JA-5K00-76812
Keywords
- electrical properties and parameters
- heterostructures
- numerical methods
- selenium
- thin films
- transport properties