Room Temperature, Dip Coating Organic Passivation for c-Si Surfaces

Kejun Chen, Abigail Meyer, Harvey Guthrey, William Nemeth, San Theingi, Matthew Page, David Young, Sumit Agarwal, Pauls Stradins

Research output: NRELPoster


Surface passivation of crystalline Si (c-Si) to reduce recombination rate is crucial to obtain high-efficiency c-Si solar cells. A fast passivation technique that can be performed at room temperature is needed when studying the degradation behaviors using various characterization methods to not destroy the degraded states. In this contribution, we explore Nafion via dip coating on n-type Cz wafers. We show that both the Nafion concentration and the conditions of surface and edge affect the passivation quality, and we achieve excellent passivation quality of iVoc of 716 mV, with a saturation current density (J0) of 7 fA/cm2. Additionally, electron paramagnetic resonance (EPR) shows Nafion can be used under cryogenic temperature and reveals the reduction of Si dangling bond after Nafion treatment.
Original languageAmerican English
StatePublished - 2022

Publication series

NamePresented at the 49th IEEE Photovoltaic Specialists Conference (PVSC 49), 5-10 June 2022, Philadelphia, Pennsylvania

NREL Publication Number

  • NREL/PO-5900-82879


  • dielectric solar cell
  • electron paramagnetic resonance
  • EPR
  • n-type Cz wafer
  • Nafion
  • photovoltaic
  • PV
  • silicon solar cell
  • surface passivation
  • TMAH


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