@misc{0376467abaaf4945823ada2eb2919487,
title = "Room Temperature, Dip Coating Organic Passivation for c-Si Surfaces",
abstract = "Surface passivation of crystalline Si (c-Si) to reduce recombination rate is crucial to obtain high-efficiency c-Si solar cells. A fast passivation technique that can be performed at room temperature is needed when studying the degradation behaviors using various characterization methods to not destroy the degraded states. In this contribution, we explore Nafion via dip coating on n-type Cz wafers. We show that both the Nafion concentration and the conditions of surface and edge affect the passivation quality, and we achieve excellent passivation quality of iVoc of 716 mV, with a saturation current density (J0) of 7 fA/cm2. Additionally, electron paramagnetic resonance (EPR) shows Nafion can be used under cryogenic temperature and reveals the reduction of Si dangling bond after Nafion treatment.",
keywords = "dielectric solar cell, electron paramagnetic resonance, EPR, n-type Cz wafer, Nafion, photovoltaic, PV, silicon solar cell, surface passivation, TMAH",
author = "Kejun Chen and Abigail Meyer and Harvey Guthrey and William Nemeth and San Theingi and Matthew Page and David Young and Sumit Agarwal and Pauls Stradins",
year = "2022",
language = "American English",
series = "Presented at the 49th IEEE Photovoltaic Specialists Conference (PVSC 49), 5-10 June 2022, Philadelphia, Pennsylvania",
type = "Other",
}