Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Yuttapoom Puttisong, Irina A. Buyanova, Aaron J. Ptak, Charles W. Tu, Lutz Geelhaar, Henning Riechert, Weimin M. Chen

Research output: Contribution to journalArticlepeer-review

25 Scopus Citations


The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

Original languageAmerican English
Pages (from-to)738-742
Number of pages5
JournalAdvanced Materials
Issue number5
StatePublished - 2013

NREL Publication Number

  • NREL/JA-5200-58140


  • defects
  • room temperature
  • semiconductors
  • spin amplifiers
  • spintronics


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