Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Yuttapoom Puttisong; Irina A. Buyanova; Aaron J. Ptak; Charles W. Tu; Lutz Geelhaar; Henning Riechert; Weimin M. Chen

doi:10.1002/adma.201202597

Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Yuttapoom Puttisong, Irina A. Buyanova, Aaron J. Ptak, Charles W. Tu, Lutz Geelhaar, Henning Riechert, Weimin M. Chen

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

25 Scopus Citations

Abstract

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

Original language	American English
Pages (from-to)	738-742
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	5
DOIs	https://doi.org/10.1002/adma.201202597 https://doi.org/10.1002/adma.201202597
State	Published - 2013

NREL Publication Number

NREL/JA-5200-58140

Keywords

defects
room temperature
semiconductors
spin amplifiers
spintronics

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@article{b3add20b40304c65808b8f9d7ac030e4,

title = "Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys",

abstract = "The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.",

keywords = "defects, room temperature, semiconductors, spin amplifiers, spintronics",

author = "Yuttapoom Puttisong and Buyanova, {Irina A.} and Ptak, {Aaron J.} and Tu, {Charles W.} and Lutz Geelhaar and Henning Riechert and Chen, {Weimin M.}",

year = "2013",

doi = "10.1002/adma.201202597",

language = "American English",

volume = "25",

pages = "738--742",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "5",

}

TY - JOUR

T1 - Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

AU - Puttisong, Yuttapoom

AU - Buyanova, Irina A.

AU - Ptak, Aaron J.

AU - Tu, Charles W.

AU - Geelhaar, Lutz

AU - Riechert, Henning

AU - Chen, Weimin M.

PY - 2013

Y1 - 2013

N2 - The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

AB - The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

KW - defects

KW - room temperature

KW - semiconductors

KW - spin amplifiers

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=84873372814&partnerID=8YFLogxK

U2 - 10.1002/adma.201202597

DO - 10.1002/adma.201202597

M3 - Article

C2 - 23108727

AN - SCOPUS:84873372814

SN - 0935-9648

VL - 25

SP - 738

EP - 742

JO - Advanced Materials

JF - Advanced Materials

IS - 5

ER -

Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Abstract

NREL Publication Number

Keywords

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