Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Yuttapoom Puttisong; Irina A. Buyanova; Aaron J. Ptak; Charles W. Tu; Lutz Geelhaar; Henning Riechert; Weimin M. Chen

doi:10.1002/adma.201202597

Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Yuttapoom Puttisong
, Irina A. Buyanova
, Aaron J. Ptak
, Charles W. Tu
, Lutz Geelhaar
, Henning Riechert
, Weimin M. Chen

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

27 Scopus Citations

Abstract

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

Original language	American English
Pages (from-to)	738-742
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	5
DOIs	https://doi.org/10.1002/adma.201202597 https://doi.org/10.1002/adma.201202597
State	Published - 2013

NLR Publication Number

NREL/JA-5200-58140

Keywords

defects
room temperature
semiconductors
spin amplifiers
spintronics

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title = "Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys",

abstract = "The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700\% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.",

keywords = "defects, room temperature, semiconductors, spin amplifiers, spintronics",

author = "Yuttapoom Puttisong and Buyanova, \{Irina A.\} and Ptak, \{Aaron J.\} and Tu, \{Charles W.\} and Lutz Geelhaar and Henning Riechert and Chen, \{Weimin M.\}",

year = "2013",

doi = "10.1002/adma.201202597",

language = "American English",

volume = "25",

pages = "738--742",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

AU - Puttisong, Yuttapoom

AU - Buyanova, Irina A.

AU - Ptak, Aaron J.

AU - Tu, Charles W.

AU - Geelhaar, Lutz

AU - Riechert, Henning

AU - Chen, Weimin M.

PY - 2013

Y1 - 2013

N2 - The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

AB - The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

KW - defects

KW - room temperature

KW - semiconductors

KW - spin amplifiers

KW - spintronics

UR - https://www.scopus.com/pages/publications/84873372814

U2 - 10.1002/adma.201202597

DO - 10.1002/adma.201202597

M3 - Article

C2 - 23108727

AN - SCOPUS:84873372814

SN - 0935-9648

VL - 25

SP - 738

EP - 742

JO - Advanced Materials

JF - Advanced Materials

IS - 5

ER -

Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Abstract

NLR Publication Number

Keywords

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