Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

J. D. Webb, D. J. Dunlavy, T. Ciszek, R. K. Ahrenkiel, M. W. Wanlass, R. Noufi, S. M. Vernon

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GalnAsP), copper indium diselenide (CuInSe2), and gallium arsenide- germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

Original languageAmerican English
Pages (from-to)1814-1819
Number of pages6
JournalApplied Spectroscopy
Issue number11
StatePublished - 1993

NREL Publication Number

  • NREL/JA-412-5372


  • Copper indium diselenide
  • Electro-optic materials
  • FT-IR/PL spectroscopy
  • FT-Raman spectroscopy
  • Gallium arsenide-germanium alloy
  • Gallium indium arsenide phosphide
  • Photovoltaic materials
  • Silicon


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