Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

J. D. Webb; D. J. Dunlavy; T. Ciszek; R. K. Ahrenkiel; M. W. Wanlass; R. Noufi; S. M. Vernon

doi:10.1366/0003702934066019

Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

J. D. Webb, D. J. Dunlavy, T. Ciszek, R. K. Ahrenkiel, M. W. Wanlass, R. Noufi, S. M. Vernon

Materials Science

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GalnAsP), copper indium diselenide (CuInSe2), and gallium arsenide- germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

Original language	American English
Pages (from-to)	1814-1819
Number of pages	6
Journal	Applied Spectroscopy
Volume	47
Issue number	11
DOIs	https://doi.org/10.1366/0003702934066019 https://doi.org/10.1366/0003702934066019
State	Published - 1993

NREL Publication Number

NREL/JA-412-5372

Keywords

Copper indium diselenide
Electro-optic materials
FT-IR/PL spectroscopy
FT-Raman spectroscopy
Gallium arsenide-germanium alloy
Gallium indium arsenide phosphide
Photovoltaic materials
Silicon

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title = "Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer",

abstract = "This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GalnAsP), copper indium diselenide (CuInSe2), and gallium arsenide- germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.",

keywords = "Copper indium diselenide, Electro-optic materials, FT-IR/PL spectroscopy, FT-Raman spectroscopy, Gallium arsenide-germanium alloy, Gallium indium arsenide phosphide, Photovoltaic materials, Silicon",

author = "Webb, {J. D.} and Dunlavy, {D. J.} and T. Ciszek and Ahrenkiel, {R. K.} and Wanlass, {M. W.} and R. Noufi and Vernon, {S. M.}",

year = "1993",

doi = "10.1366/0003702934066019",

language = "American English",

volume = "47",

pages = "1814--1819",

journal = "Applied Spectroscopy",

issn = "0003-7028",

publisher = "SAGE Publications Inc.",

number = "11",

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TY - JOUR

T1 - Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

AU - Webb, J. D.

AU - Dunlavy, D. J.

AU - Ciszek, T.

AU - Ahrenkiel, R. K.

AU - Wanlass, M. W.

AU - Noufi, R.

AU - Vernon, S. M.

PY - 1993

Y1 - 1993

N2 - This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GalnAsP), copper indium diselenide (CuInSe2), and gallium arsenide- germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

AB - This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GalnAsP), copper indium diselenide (CuInSe2), and gallium arsenide- germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Some suggestions for improving the spectral range of the technique and removing instrumental spectral artifacts are presented.

KW - Copper indium diselenide

KW - Electro-optic materials

KW - FT-IR/PL spectroscopy

KW - FT-Raman spectroscopy

KW - Gallium arsenide-germanium alloy

KW - Gallium indium arsenide phosphide

KW - Photovoltaic materials

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0346316108&partnerID=8YFLogxK

U2 - 10.1366/0003702934066019

DO - 10.1366/0003702934066019

M3 - Article

AN - SCOPUS:0346316108

SN - 0003-7028

VL - 47

SP - 1814

EP - 1819

JO - Applied Spectroscopy

JF - Applied Spectroscopy

IS - 11

ER -

Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer

Abstract

NREL Publication Number

Keywords

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