Saturated Defect Densities of Hydrogenated Amorphous Silicon Grown by Hot-Wire Chemical Vapor Deposition at Rates up to 150 A/s

A. H. Mahan, Y. Xu, B. P. Nelson, R. S. Crandall, J. D. Cohen, K. C. Palinginis, A. C. Gallagher

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Abstract

Hydrogenated amorphous-silicon (a-Si:H) is grown by hot-wire chemical vapor deposition (HWCVD) at deposition rates (Rd) exceeding 140 Å/s (∼0.8 μm/min). These high rates are achieved by using multiple filaments and deposition conditions different than those used to produce our standard 20 Å/s material. With proper deposition parameter optimization, an AM1.5 photo-to-dark-conductivity ratio of 105 is maintained at an Rd, up to 130 Å/s, beyond which it decreases. In addition, the first saturated defect densities of high Rd, a-Si:H films are presented. These saturated defected densities are similar to those of the best HWCVD films deposited at 5-8 Å/s, and are invariant with Rd, up to 130 Å/s.

Original languageAmerican English
Pages (from-to)3788-3790
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number24
DOIs
StatePublished - 11 Jun 2001

NREL Publication Number

  • NREL/JA-520-31099

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