Scanning Tunneling Luminescence of Grain Boundaries in Cu(In,Ga)Se2

    Research output: Contribution to conferencePaper

    Abstract

    At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning tunneling microscopy (STM). In this Solar Program Review Meeting, we report on the latest results obtained in Cu(In,Ga)Se2 (CIGS) thin films by this adapted STM. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIGS. STL is excited either by(i) diffusion of tunneling electrons and subsequent recombination with available holes in CIGS or (ii) impact ionization by hot electrons. Which process becomes predominant depends on the voltage applied to the STM tip. Photon mapping shows electronically active, extended defects near the surface of CIGS thin films.
    Original languageAmerican English
    Number of pages5
    StatePublished - 2005
    Event2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
    Duration: 25 Oct 200428 Oct 2004

    Conference

    Conference2004 DOE Solar Energy Technologies Program Review Meeting
    CityDenver, Colorado
    Period25/10/0428/10/04

    Bibliographical note

    Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

    NREL Publication Number

    • NREL/CP-520-36975

    Keywords

    • films
    • nanoscale
    • photons
    • PV
    • scanning tunneling luminescence (STL)
    • scanning tunneling microscopy (STM)

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