Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

Research output: Contribution to conference › Paper

Abstract

Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3),(955), and (111).

Original language	American English
Number of pages	10
State	Published - 2000
Event	12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12) - Vail, Colorado Duration: 14 Aug 2000 → 18 Aug 2000

Conference

Conference	12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12)
City	Vail, Colorado
Period	14/08/00 → 18/08/00

Bibliographical note

Prepared for the 12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12), 14-18 August 2000, Vail, Colorado

NREL Publication Number

NREL/CP-520-28911

Access to Document

https://www.nrel.gov/docs/fy01osti/28911.pdf

Cite this

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title = "Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces",

abstract = "Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3),(955), and (111).",

author = "NREL",

note = "Prepared for the 12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12), 14-18 August 2000, Vail, Colorado; 12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12) ; Conference date: 14-08-2000 Through 18-08-2000",

year = "2000",

language = "American English",

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T1 - Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

AU - NREL, null

N1 - Prepared for the 12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12), 14-18 August 2000, Vail, Colorado

PY - 2000

Y1 - 2000

N2 - Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3),(955), and (111).

AB - Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3),(955), and (111).

M3 - Paper

T2 - 12th American Conference on Crysytal Growth and Epitaxy (ACCGE-12)

Y2 - 14 August 2000 through 18 August 2000

ER -

Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this