Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

W. E. McMahon; J. M. Olson

doi:10.1016/S0022-0248(01)00901-0

Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

W. E. McMahon
, J. M. Olson

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

Ge(mnn) surfaces between (1 0 0) and (1 1 1) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (1 0 0), (11, 3, 3), (9 5 5), and (1 1 1).

Original language	American English
Pages (from-to)	410-414
Number of pages	5
Journal	Journal of Crystal Growth
Volume	225
Issue number	2-4
DOIs	https://doi.org/10.1016/S0022-0248(01)00901-0 https://doi.org/10.1016/S0022-0248(01)00901-0
State	Published - May 2001

NLR Publication Number

NREL/JA-520-31102

Keywords

A1. Scanning tunneling microscopy
A3. Metalorganic vapor phase epitaxy
B1. Arsine
B1. Germanium
B1. Phosphine

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@article{9190c31e67634331bb736f650b62c297,

title = "Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces",

abstract = "Ge(mnn) surfaces between (1 0 0) and (1 1 1) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (1 0 0), (11, 3, 3), (9 5 5), and (1 1 1).",

keywords = "A1. Scanning tunneling microscopy, A3. Metalorganic vapor phase epitaxy, B1. Arsine, B1. Germanium, B1. Phosphine",

author = "McMahon, \{W. E.\} and Olson, \{J. M.\}",

year = "2001",

month = may,

doi = "10.1016/S0022-0248(01)00901-0",

language = "American English",

volume = "225",

pages = "410--414",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2-4",

}

TY - JOUR

T1 - Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

AU - McMahon, W. E.

AU - Olson, J. M.

PY - 2001/5

Y1 - 2001/5

N2 - Ge(mnn) surfaces between (1 0 0) and (1 1 1) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (1 0 0), (11, 3, 3), (9 5 5), and (1 1 1).

AB - Ge(mnn) surfaces between (1 0 0) and (1 1 1) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (1 0 0), (11, 3, 3), (9 5 5), and (1 1 1).

KW - A1. Scanning tunneling microscopy

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Arsine

KW - B1. Germanium

KW - B1. Phosphine

UR - https://www.scopus.com/pages/publications/0035335290

U2 - 10.1016/S0022-0248(01)00901-0

DO - 10.1016/S0022-0248(01)00901-0

M3 - Article

AN - SCOPUS:0035335290

SN - 0022-0248

VL - 225

SP - 410

EP - 414

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-4

ER -

Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces

Abstract

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Keywords

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