Schottky Barrier Formation and the Initial Metal-Atom Bonding State: InP (110)-Al vs GaAs (110)-Al

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	610-612
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	3
DOIs	https://doi.org/10.1116/1.582608
State	Published - 1983

Work performed by Department of Physics, University of Wisconsin, Madison, Wisconsin, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

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title = "Schottky Barrier Formation and the Initial Metal-Atom Bonding State: InP (110)-Al vs GaAs (110)-Al",

author = "NREL",

note = "Work performed by Department of Physics, University of Wisconsin, Madison, Wisconsin, and Solar Energy Research Institute, Golden, Colorado",

year = "1983",

doi = "10.1116/1.582608",

language = "American English",

volume = "1",

pages = "610--612",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Schottky Barrier Formation and the Initial Metal-Atom Bonding State: InP (110)-Al vs GaAs (110)-Al

AU - NREL, null

N1 - Work performed by Department of Physics, University of Wisconsin, Madison, Wisconsin, and Solar Energy Research Institute, Golden, Colorado

PY - 1983

Y1 - 1983

U2 - 10.1116/1.582608

DO - 10.1116/1.582608

M3 - Article

SN - 0734-211X

VL - 1

SP - 610

EP - 612

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -