Schottky Barrier Formation and the Initial Metal-Atom Bonding State: InP (110)-Al vs GaAs (110)-Al

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)610-612
    Number of pages3
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Issue number3
    StatePublished - 1983

    Bibliographical note

    Work performed by Department of Physics, University of Wisconsin, Madison, Wisconsin, and Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-212-4085

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