Schottky Barrier Formation Between Poly(3-Methylthiophene) and n-Type Cadmium Sulfide

S. Glenis; A. J. Frank

doi:10.1016/0379-6779(89)90590-0

Schottky Barrier Formation Between Poly(3-Methylthiophene) and n-Type Cadmium Sulfide

S. Glenis, A. J. Frank

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

37 Scopus Citations

Abstract

The solid state and electrochemical properties of the junction between highly doped PMeT (PMeT = poly(3-methylthiophene)) and n-CdS have been characterized by current voltage (J-V) and capacitance-voltage (C-V) measurements. Junction characteristics of the n-CdS:PMeT:Au cell are compared with those of metal:n-CdS solid state Schottky barrier devices. Alterations in the junction characteristics are observed when the PMeT:n-CdS solid state device contacts an aqueous electrolyte.

Original language	American English
Pages (from-to)	681-686
Number of pages	6
Journal	Synthetic Metals
Volume	28
Issue number	1-2
DOIs	https://doi.org/10.1016/0379-6779(89)90590-0 https://doi.org/10.1016/0379-6779(89)90590-0
State	Published - 1989

NREL Publication Number

ACNR/JA-233-11326

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title = "Schottky Barrier Formation Between Poly(3-Methylthiophene) and n-Type Cadmium Sulfide",

abstract = "The solid state and electrochemical properties of the junction between highly doped PMeT (PMeT = poly(3-methylthiophene)) and n-CdS have been characterized by current voltage (J-V) and capacitance-voltage (C-V) measurements. Junction characteristics of the n-CdS:PMeT:Au cell are compared with those of metal:n-CdS solid state Schottky barrier devices. Alterations in the junction characteristics are observed when the PMeT:n-CdS solid state device contacts an aqueous electrolyte.",

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AU - Glenis, S.

AU - Frank, A. J.

PY - 1989

Y1 - 1989

N2 - The solid state and electrochemical properties of the junction between highly doped PMeT (PMeT = poly(3-methylthiophene)) and n-CdS have been characterized by current voltage (J-V) and capacitance-voltage (C-V) measurements. Junction characteristics of the n-CdS:PMeT:Au cell are compared with those of metal:n-CdS solid state Schottky barrier devices. Alterations in the junction characteristics are observed when the PMeT:n-CdS solid state device contacts an aqueous electrolyte.

AB - The solid state and electrochemical properties of the junction between highly doped PMeT (PMeT = poly(3-methylthiophene)) and n-CdS have been characterized by current voltage (J-V) and capacitance-voltage (C-V) measurements. Junction characteristics of the n-CdS:PMeT:Au cell are compared with those of metal:n-CdS solid state Schottky barrier devices. Alterations in the junction characteristics are observed when the PMeT:n-CdS solid state device contacts an aqueous electrolyte.

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U2 - 10.1016/0379-6779(89)90590-0

DO - 10.1016/0379-6779(89)90590-0

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JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-2

ER -

Schottky Barrier Formation Between Poly(3-Methylthiophene) and n-Type Cadmium Sulfide

Abstract

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