Schottky Barrier Formation on (NH4)2S-treated n- and p-type (100) GaAs

Research output: Contribution to journal › Article

Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana

NREL Publication Number

@article{fb97a3c04fa64ad9a08f1e58a524432d,

title = "Schottky Barrier Formation on (NH4)2S-treated n- and p-type (100) GaAs",

author = "NREL",

note = "Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana",

year = "1988",

doi = "10.1063/1.100572",

language = "American English",

volume = "53",

pages = "66--68",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Schottky Barrier Formation on (NH4)2S-treated n- and p-type (100) GaAs

AU - NREL, null

N1 - Work performed by School of Electrical Engineering, Purdue University, West Lafayette, Indiana

PY - 1988

Y1 - 1988

U2 - 10.1063/1.100572

DO - 10.1063/1.100572

M3 - Article

SN - 0003-6951

VL - 53

SP - 66

EP - 68

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -