Abstract
A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequentlycontacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.
Original language | American English |
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Patent number | 8,685,781 |
Filing date | 1/04/14 |
State | Published - 2014 |
Bibliographical note
Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)NREL Publication Number
- NREL/PT-5900-62970