Abstract
We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid1018 holes/cm3 range can be achieved for the as-grown material.
Original language | American English |
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Pages (from-to) | 1095-1097 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 8 |
DOIs | |
State | Published - 25 Aug 1997 |
NREL Publication Number
- NREL/JA-520-22956