Selection of Substrate Orientation and Phosphorous Flux to Achieve p-type Carbon Doping of Ga0.5In0.5P by Molecular Beam Epitaxy

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Abstract

We show that the p-type doping of Ga0.5In0.5P growth by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation andphosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid-10 to the 18th holes/cm# range can be achieved for the as-grown material.
Original languageAmerican English
Pages (from-to)1095-1097
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number8
DOIs
StatePublished - 1997

NREL Publication Number

  • NREL/JA-520-22956

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