Selection of Substrate Orientation and Phosphorous Flux to Achieve p-type Carbon Doping of Ga0.5In0.5P by Molecular Beam Epitaxy

D. J. Friedman; A. E. Kibbler; R. Reedy

doi:10.1063/1.119737

Selection of Substrate Orientation and Phosphorous Flux to Achieve p-type Carbon Doping of Ga0.5In0.5P by Molecular Beam Epitaxy

D. J. Friedman
, A. E. Kibbler
, R. Reedy

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

We show that the p-type doping of Ga_0.5In_0.5P grown by solid-source molecular beam epitaxy using CBr₄ as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga_0.5In_0.5P into the mid10¹⁸ holes/cm³ range can be achieved for the as-grown material.

Original language	American English
Pages (from-to)	1095-1097
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	8
DOIs	https://doi.org/10.1063/1.119737 https://doi.org/10.1063/1.119737
State	Published - 25 Aug 1997

NLR Publication Number

NREL/JA-520-22956

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title = "Selection of Substrate Orientation and Phosphorous Flux to Achieve p-type Carbon Doping of Ga0.5In0.5P by Molecular Beam Epitaxy",

abstract = "We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid1018 holes/cm3 range can be achieved for the as-grown material.",

author = "Friedman, \{D. J.\} and Kibbler, \{A. E.\} and R. Reedy",

year = "1997",

month = aug,

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doi = "10.1063/1.119737",

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volume = "71",

pages = "1095--1097",

journal = "Applied Physics Letters",

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T1 - Selection of Substrate Orientation and Phosphorous Flux to Achieve p-type Carbon Doping of Ga0.5In0.5P by Molecular Beam Epitaxy

AU - Friedman, D. J.

AU - Kibbler, A. E.

AU - Reedy, R.

PY - 1997/8/25

Y1 - 1997/8/25

N2 - We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid1018 holes/cm3 range can be achieved for the as-grown material.

AB - We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid1018 holes/cm3 range can be achieved for the as-grown material.

UR - https://www.scopus.com/pages/publications/3242672226

U2 - 10.1063/1.119737

DO - 10.1063/1.119737

M3 - Article

AN - SCOPUS:3242672226

SN - 0003-6951

VL - 71

SP - 1095

EP - 1097

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Selection of Substrate Orientation and Phosphorous Flux to Achieve p-type Carbon Doping of Ga0.5In0.5P by Molecular Beam Epitaxy

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