Abstract
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
Original language | American English |
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Patent number | US 10,256,093 B2 |
Filing date | 9/04/19 |
State | Published - 2019 |
NREL Publication Number
- NREL/PT-5900-73707
Keywords
- layer
- semiconductor materials
- sol-gel
- substrate