Selective Area Growth of Semiconductors Using Patterned Sol-Gel Materials

Emily Warren (Inventor), Adele Tamboli (Inventor)

Research output: Patent


Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
Original languageAmerican English
Patent numberUS 10,256,093 B2
Filing date9/04/19
StatePublished - 2019

NREL Publication Number

  • NREL/PT-5900-73707


  • layer
  • semiconductor materials
  • sol-gel
  • substrate


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