Abstract
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
| Original language | American English |
|---|---|
| Patent number | US 10,256,093 B2 |
| Filing date | 9/04/19 |
| State | Published - 2019 |
NLR Publication Number
- NREL/PT-5900-73707
Keywords
- layer
- semiconductor materials
- sol-gel
- substrate