Selective Excitation of Window and Buffer Layers in Chalcopyrite Devices and Modules

Stephen Glynn, Ingrid Repins, Lorelle Mansfield, James Burst, Carolyn Beall, Karen Bowers

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly “buffers,” which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. This provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable “light-soaked” state.

Original languageAmerican English
Pages (from-to)70-76
Number of pages7
JournalThin Solid Films
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© 2018

NREL Publication Number

  • NREL/JA-5K00-68654


  • Buffer layers
  • CdS
  • CIGS
  • Copper indium gallium diselenide
  • Metastability
  • Selective excitation
  • Solar cells
  • Zinc oxysulfide


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