Selective Patterning of Single-Crystal GaAs/Ge Structures on Si Substrates by Molecular Beam Epitaxy

doi:10.1116/1.573339

Selective Patterning of Single-Crystal GaAs/Ge Structures on Si Substrates by Molecular Beam Epitaxy

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	883-886
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	3
Issue number	3, Part I
DOIs	https://doi.org/10.1116/1.573339
State	Published - 1985

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Department of Electrical Engineering, University of Colorado, Boulder, Colorado

NREL Publication Number

ACNR/JA-213-6336

Access to Document

10.1116/1.573339

Cite this

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title = "Selective Patterning of Single-Crystal GaAs/Ge Structures on Si Substrates by Molecular Beam Epitaxy",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Department of Electrical Engineering, University of Colorado, Boulder, Colorado",

year = "1985",

doi = "10.1116/1.573339",

language = "American English",

volume = "3",

pages = "883--886",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3, Part I",

}

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T1 - Selective Patterning of Single-Crystal GaAs/Ge Structures on Si Substrates by Molecular Beam Epitaxy

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Department of Electrical Engineering, University of Colorado, Boulder, Colorado

PY - 1985

Y1 - 1985

U2 - 10.1116/1.573339

DO - 10.1116/1.573339

M3 - Article

SN - 0734-2101

VL - 3

SP - 883

EP - 886

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3, Part I

ER -