Selenization of CIS and CIGS Layers Deposited by Chemical Spray Pyrolysis

Brian Egaas, B. Babu, S. Velumani

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.
Original languageAmerican English
Pages (from-to)15369-15375
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Issue number18
StatePublished - 2018

NREL Publication Number

  • NREL/JA-5K00-71317


  • chemical analysis
  • pyrolysis
  • scanning electron microscopy
  • selenium compounds
  • substrates
  • thin films
  • x-ray diffraction


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