Self Aligned Aluminum Selective Emitter for n-type Si Cells

Vincenzo LaSalvia, San Theingi, Robert Reedy Jr., Pauls Stradins

Research output: Contribution to conferencePaper


We show a method for making a self-aligned selective emitter by annealing aluminum grid lines above the SiAl eutectic temperature, and study the recombination properties using lifetime measurements. The dark saturation current density at the metal contact (J 0,metal ) is determined as a function of minority carrier density using photoconductive decay. After annealing at 600 degrees C, J 0,metal decreases from 1800 fA cm -2 to 500 fA cm -2 at an injection level of 1E15 cm -3 . This value of J 0,metal would correspond to a very low emitter recombination contribution of ~10 - 25 fA cm -2 for a front metal grid with area coverage of 2 - 5%. In addition, J 0,metal is found to be injection dependent. A low contact resistivity of ~0.1 mOhm cm -2 is obtained from transmission line measurement (TLM).
Original languageAmerican English
Number of pages3
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017


Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.

NREL Publication Number

  • NREL/CP-5900-68657


  • aluminum
  • dark saturation current
  • selective emitter
  • silicon solar cells
  • surface passivation


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