Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint

David Young; San Theingi; Vincenzo LaSalvia; Kejun Chen; William Nemeth; Dawn Findley; Matthew Page; Pauls Stradins

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint

David Young, San Theingi, Vincenzo LaSalvia, Kejun Chen, William Nemeth, Dawn Findley, Matthew Page, Pauls Stradins

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with re-hydrogenation.

Original language	American English
Number of pages	7
State	Published - 2019
Event	46th IEEE Photovoltaic Specialists Conference (PVSC 46) - Chicago, Illinois Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference (PVSC 46)
City	Chicago, Illinois
Period	16/06/19 → 21/06/19

Bibliographical note

See NREL/CP-5900-76354 for paper as published in IEEE proceedings

NREL Publication Number

NREL/CP-5900-74072

Keywords

passivated contacts
RIE etching
silicon
solar cell

Access to Document

https://www.nrel.gov/docs/fy20osti/74072.pdf

Cite this

Young, D., Theingi, S., LaSalvia, V., Chen, K., Nemeth, W., Findley, D., Page, M., & Stradins, P. (2019). Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint. Paper presented at 46th IEEE Photovoltaic Specialists Conference (PVSC 46), Chicago, Illinois. https://www.nrel.gov/docs/fy20osti/74072.pdf

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title = "Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint",

abstract = "Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with re-hydrogenation.",

keywords = "passivated contacts, RIE etching, silicon, solar cell",

author = "David Young and San Theingi and Vincenzo LaSalvia and Kejun Chen and William Nemeth and Dawn Findley and Matthew Page and Pauls Stradins",

note = "See NREL/CP-5900-76354 for paper as published in IEEE proceedings; 46th IEEE Photovoltaic Specialists Conference (PVSC 46) ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

language = "American English",

}

Young, D , Theingi, S, LaSalvia, V, Chen, K, Nemeth, W, Findley, D, Page, M & Stradins, P 2019, 'Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint', Paper presented at 46th IEEE Photovoltaic Specialists Conference (PVSC 46), Chicago, Illinois, 16/06/19 - 21/06/19. <https://www.nrel.gov/docs/fy20osti/74072.pdf>

TY - CONF

T1 - Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint

AU - Young, David

AU - Theingi, San

AU - LaSalvia, Vincenzo

AU - Chen, Kejun

AU - Nemeth, William

AU - Findley, Dawn

AU - Page, Matthew

AU - Stradins, Pauls

N1 - See NREL/CP-5900-76354 for paper as published in IEEE proceedings

PY - 2019

Y1 - 2019

N2 - Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with re-hydrogenation.

AB - Poly-Si/SiO2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with re-hydrogenation.

KW - passivated contacts

KW - RIE etching

KW - silicon

KW - solar cell

M3 - Paper

T2 - 46th IEEE Photovoltaic Specialists Conference (PVSC 46)

Y2 - 16 June 2019 through 21 June 2019

ER -

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells: Preprint

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this