Semiconducting Devices Containing Quantum Wells

Myles Steiner (Inventor), Ryan France (Inventor)

Research output: Patent


The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
Original languageAmerican English
Patent number10,991,847 B2
Filing date27/04/21
StatePublished - 2021

NREL Publication Number

  • NREL/PT-5900-79884


  • longer wavelengths
  • multiple quantum wells
  • optoelectronic applications
  • photon absorption
  • photovol­taic device
  • photovoltaics


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