Abstract
The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
Original language | American English |
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Patent number | 10,991,847 B2 |
Filing date | 27/04/21 |
State | Published - 2021 |
NREL Publication Number
- NREL/PT-5900-79884
Keywords
- longer wavelengths
- multiple quantum wells
- optoelectronic applications
- photon absorption
- photovoltaic device
- photovoltaics