Semiconductor Interfacial Carrier Dynamics via Photoinduced Electric Fields

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Solar photoconversion in semiconductors is driven by charge separation at the interface of the semiconductor and contacting layers. Here we demonstrate that time-resolved photoinduced reflectance from a semiconductor captures interfacial carrier dynamics.We applied this transient photoreflectance method to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) interfaces critically important to solar-driven water splitting.We monitored the formation and decay of transient electric fields that form upon photoexcitation within bare p-GaInP2, p-GaInP2/platinum (Pt), and p-GaInP2/amorphous titania (TiO2) interfaces. The data show that a field at both the p-GaInP2/Pt and p-GaInP2/TiO2 interfaces drives charge separation. Additionally, the charge recombination rate at the p-GaInP2/TiO2 interface is greatly reduced owing to its p-n nature, compared with the Schottky nature of the p-GaInP2/Pt interface.

Original languageAmerican English
Pages (from-to)1061-1065
Number of pages5
Issue number6264
StatePublished - 2015

NREL Publication Number

  • NREL/JA-5900-64978


  • chemical fuels
  • photoelectrochemistry
  • solar-photochemistry
  • transient photoreflectance
  • ultrafast spectroscopy


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