Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates: Quarterly Technical Progress Report No. 3, April 1 - June 30, 1980

Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates: Quarterly Technical Progress Report No. 3, April 1 - June 30, 1980

Research output: NREL › Subcontract Report

Abstract

The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. As shown in the previous two technical reports, several purification techniques have been studied. They include (l) acid leaching withHCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vacuum treatment and by impurity redistribution using ingot pulling has been studied.

Original language	American English
Number of pages	32
State	Published - 1980

Bibliographical note

Work performed by Motorola, Inc., Phoenix, Arizona

NREL Publication Number

SERI/SR-20258

Other Report Number

DOE/SERI-8119-3/2-T6

Keywords

crystal growth
metallurgical grade silicon
silicon substrates

Access to Document

https://www.nrel.gov/docs/legosti/old/8119-3-2-T6.pdf

Cite this

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title = "Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates: Quarterly Technical Progress Report No. 3, April 1 - June 30, 1980",

abstract = "The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. As shown in the previous two technical reports, several purification techniques have been studied. They include (l) acid leaching withHCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vacuum treatment and by impurity redistribution using ingot pulling has been studied.",

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year = "1980",

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AU - NREL, null

N1 - Work performed by Motorola, Inc., Phoenix, Arizona

PY - 1980

Y1 - 1980

N2 - The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. As shown in the previous two technical reports, several purification techniques have been studied. They include (l) acid leaching withHCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vacuum treatment and by impurity redistribution using ingot pulling has been studied.

AB - The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. As shown in the previous two technical reports, several purification techniques have been studied. They include (l) acid leaching withHCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vacuum treatment and by impurity redistribution using ingot pulling has been studied.

KW - crystal growth

KW - metallurgical grade silicon

KW - silicon substrates

M3 - Subcontract Report

ER -

Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates: Quarterly Technical Progress Report No. 3, April 1 - June 30, 1980

Abstract

Bibliographical note

NREL Publication Number

Other Report Number

Keywords

Access to Document

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Cite this