Abstract
In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt andreduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and theinterface heater/heat sink (22) to control the interface shape and crystal growth rate.
Original language | American English |
---|---|
Patent number | 6,984,263 B2 |
State | Published - 2006 |
NREL Publication Number
- NREL/PT-520-39542
Keywords
- semiconductor melt
- semicontinuous Czochralski crystal growth
- shallow melt apparatus