Shape of Self-Assembled InAs Islands Grown by Molecular Beam Epitaxy

Hao Lee, Weidong Yang, Peter C. Sercel, A. G. Norman

Research output: Contribution to journalArticlepeer-review

13 Scopus Citations


We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with {136} bounding facets. This shape is characterized by C2v symmetry and a parallelogram base, which is elongated along the [11̄0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [11̄0] directions as well as atomic force microscopy images strongly support the {136} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [11̄0] direction, consistent with the proposed quantum dot shape.

Original languageAmerican English
Pages (from-to)481-485
Number of pages5
JournalJournal of Electronic Materials
Issue number5
StatePublished - 1999

NREL Publication Number

  • NREL/JA-520-27252


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