Shape of Self-Assembled InAs Islands Grown by Molecular Beam Epitaxy

Hao Lee; Weidong Yang; Peter C. Sercel; A. G. Norman

doi:10.1007/s11664-999-0098-7

Shape of Self-Assembled InAs Islands Grown by Molecular Beam Epitaxy

Hao Lee
, Weidong Yang
, Peter C. Sercel
, A. G. Norman

Materials Science

University of Oregon

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with {136} bounding facets. This shape is characterized by C_2v symmetry and a parallelogram base, which is elongated along the [11̄0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [11̄0] directions as well as atomic force microscopy images strongly support the {136} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [11̄0] direction, consistent with the proposed quantum dot shape.

Original language	American English
Pages (from-to)	481-485
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	5
DOIs	https://doi.org/10.1007/s11664-999-0098-7 https://doi.org/10.1007/s11664-999-0098-7
State	Published - 1999

NLR Publication Number

NREL/JA-520-27252

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@article{1a10308837c44ab9b4b66166830ca4e6,

title = "Shape of Self-Assembled InAs Islands Grown by Molecular Beam Epitaxy",

abstract = "We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with \{136\} bounding facets. This shape is characterized by C2v symmetry and a parallelogram base, which is elongated along the [1{\=1}0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [1{\=1}0] directions as well as atomic force microscopy images strongly support the \{136\} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [1{\=1}0] direction, consistent with the proposed quantum dot shape.",

author = "Hao Lee and Weidong Yang and Sercel, \{Peter C.\} and Norman, \{A. G.\}",

year = "1999",

doi = "10.1007/s11664-999-0098-7",

language = "American English",

volume = "28",

pages = "481--485",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Shape of Self-Assembled InAs Islands Grown by Molecular Beam Epitaxy

AU - Lee, Hao

AU - Yang, Weidong

AU - Sercel, Peter C.

AU - Norman, A. G.

PY - 1999

Y1 - 1999

N2 - We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with {136} bounding facets. This shape is characterized by C2v symmetry and a parallelogram base, which is elongated along the [11̄0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [11̄0] directions as well as atomic force microscopy images strongly support the {136} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [11̄0] direction, consistent with the proposed quantum dot shape.

AB - We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with {136} bounding facets. This shape is characterized by C2v symmetry and a parallelogram base, which is elongated along the [11̄0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [11̄0] directions as well as atomic force microscopy images strongly support the {136} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [11̄0] direction, consistent with the proposed quantum dot shape.

UR - https://www.scopus.com/pages/publications/0032649505

U2 - 10.1007/s11664-999-0098-7

DO - 10.1007/s11664-999-0098-7

M3 - Article

AN - SCOPUS:0032649505

SN - 0361-5235

VL - 28

SP - 481

EP - 485

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Shape of Self-Assembled InAs Islands Grown by Molecular Beam Epitaxy

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