Shubnikov-de Haas Measurement of Electron Effective Mass in GaAs1-xBix

B. Fluegel; R. N. Kini; A. J. Ptak; D. Beaton; K. Alberi; A. Mascarenhas

doi:10.1063/1.3655198

Shubnikov-de Haas Measurement of Electron Effective Mass in GaAs1-xBix

B. Fluegel, R. N. Kini, A. J. Ptak, D. Beaton, K. Alberi, A. Mascarenhas

Research output: Contribution to journal › Article › peer-review

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Abstract

Magnetic field and temperature dependent resistivity measurements on n-type GaAs_1-xBi_x epitaxially grown films show clear Shubnikov de Haas oscillations in the range 0 x ≤ 0.≤0088. An overall decrease in the electron effective mass is observed for this range of compositions. Accounting for the known giant bandgap bowing and giant spin orbit bowing, the measured changes in the effective mass are in qualitative agreement with perturbation theory applied to these energy band changes, confirming that bismuth mainly perturbs the valence band. The stronger compositional dependence of the measured mass is attributed to effects from the bismuth isolated state.

Original language	American English
Article number	162108
Number of pages	4
Journal	Applied Physics Letters
Volume	99
Issue number	16
DOIs	https://doi.org/10.1063/1.3655198 https://doi.org/10.1063/1.3655198
State	Published - 17 Oct 2011

NREL Publication Number

NREL/JA-5900-52605

Keywords

electron effective mass
GaAs1xBix
magnetic field
semiconductor
temperature

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@article{ad20c91bee414b94b9f82cce96531902,

title = "Shubnikov-de Haas Measurement of Electron Effective Mass in GaAs1-xBix",

abstract = "Magnetic field and temperature dependent resistivity measurements on n-type GaAs1-xBix epitaxially grown films show clear Shubnikov de Haas oscillations in the range 0 x ≤ 0.≤0088. An overall decrease in the electron effective mass is observed for this range of compositions. Accounting for the known giant bandgap bowing and giant spin orbit bowing, the measured changes in the effective mass are in qualitative agreement with perturbation theory applied to these energy band changes, confirming that bismuth mainly perturbs the valence band. The stronger compositional dependence of the measured mass is attributed to effects from the bismuth isolated state.",

keywords = "electron effective mass, GaAs1xBix, magnetic field, semiconductor, temperature",

author = "B. Fluegel and Kini, {R. N.} and Ptak, {A. J.} and D. Beaton and K. Alberi and A. Mascarenhas",

year = "2011",

month = oct,

day = "17",

doi = "10.1063/1.3655198",

language = "American English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Shubnikov-de Haas Measurement of Electron Effective Mass in GaAs1-xBix

AU - Fluegel, B.

AU - Kini, R. N.

AU - Ptak, A. J.

AU - Beaton, D.

AU - Alberi, K.

AU - Mascarenhas, A.

PY - 2011/10/17

Y1 - 2011/10/17

N2 - Magnetic field and temperature dependent resistivity measurements on n-type GaAs1-xBix epitaxially grown films show clear Shubnikov de Haas oscillations in the range 0 x ≤ 0.≤0088. An overall decrease in the electron effective mass is observed for this range of compositions. Accounting for the known giant bandgap bowing and giant spin orbit bowing, the measured changes in the effective mass are in qualitative agreement with perturbation theory applied to these energy band changes, confirming that bismuth mainly perturbs the valence band. The stronger compositional dependence of the measured mass is attributed to effects from the bismuth isolated state.

AB - Magnetic field and temperature dependent resistivity measurements on n-type GaAs1-xBix epitaxially grown films show clear Shubnikov de Haas oscillations in the range 0 x ≤ 0.≤0088. An overall decrease in the electron effective mass is observed for this range of compositions. Accounting for the known giant bandgap bowing and giant spin orbit bowing, the measured changes in the effective mass are in qualitative agreement with perturbation theory applied to these energy band changes, confirming that bismuth mainly perturbs the valence band. The stronger compositional dependence of the measured mass is attributed to effects from the bismuth isolated state.

KW - electron effective mass

KW - GaAs1xBix

KW - magnetic field

KW - semiconductor

KW - temperature

UR - http://www.scopus.com/inward/record.url?scp=80155187602&partnerID=8YFLogxK

U2 - 10.1063/1.3655198

DO - 10.1063/1.3655198

M3 - Article

AN - SCOPUS:80155187602

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162108

ER -

Shubnikov-de Haas Measurement of Electron Effective Mass in GaAs1-xBix

Abstract

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