Significant Improvement in Silicon Chemical Vapor Deposition Epitaxy Above the Surface Dehydrogenation Temperature: Article No. 093520

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NREL Publication Number

@article{ae27dd79fffb43c2bae9b02bd82bbfa2,

title = "Significant Improvement in Silicon Chemical Vapor Deposition Epitaxy Above the Surface Dehydrogenation Temperature: Article No. 093520",

author = "NREL",

year = "2006",

doi = "10.1063/1.2363766",

language = "American English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}