Silicon Device Processing in H-Ambients: H-Diffusion Mechanisums and Influence on Electronic Properties

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	1616-1627
Number of pages	12
Journal	Journal of Electronic Materials
Volume	30
Issue number	12
DOIs	https://doi.org/10.1007/s11664-001-0181-1
State	Published - 2001

NREL Publication Number

@article{573db08d3d074952a8a5c2b187ca1371,

title = "Silicon Device Processing in H-Ambients: H-Diffusion Mechanisums and Influence on Electronic Properties",

author = "NREL",

year = "2001",

doi = "10.1007/s11664-001-0181-1",

language = "American English",

volume = "30",

pages = "1616--1627",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}