Silicon Heterojunction System Field Performance

Dirk C. Jordan, Chris Deline, Steve Johnston, Steve R. Rummel, Bill Sekulic, Peter Hacke, Sarah R. Kurtz, Kristopher O. Davis, Eric John Schneller, Xingshu Sun, Muhammad A. Alam, Ronald A. Sinton

Research output: Contribution to journalArticlepeer-review

54 Scopus Citations

Abstract

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc , thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.

Original languageAmerican English
Pages (from-to)177-182
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume8
Issue number1
DOIs
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NREL Publication Number

  • NREL/JA-5J00-68683

Keywords

  • Durability
  • Heterojunction with intrinsic thin-film layer (HIT)
  • Photovoltaic (PV) field performance
  • Si heterojunction
  • Terms - Degradation rates

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