Abstract
A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc , thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.
Original language | American English |
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Pages (from-to) | 177-182 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 8 |
Issue number | 1 |
DOIs | |
State | Published - 2018 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
NREL Publication Number
- NREL/JA-5J00-68683
Keywords
- Durability
- Heterojunction with intrinsic thin-film layer (HIT)
- Photovoltaic (PV) field performance
- Si heterojunction
- Terms - Degradation rates