Silicon Homoepitaxy Using Tantalum-Filament Hot-Wire Chemical Vapor Deposition

Silicon Homoepitaxy Using Tantalum-Filament Hot-Wire Chemical Vapor Deposition

Research output: Contribution to conference › Paper

Original language	American English
Pages	177-182
Number of pages	6
State	Published - 2005
Event	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium - San Francisco, California Duration: 28 Mar 2005 → 1 Apr 2005

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium
City	San Francisco, California
Period	28/03/05 → 1/04/05

NREL Publication Number

NREL/CP-520-37807

Keywords

hot-wire chemical vapor deposition (HWCVD)
photovoltaics (PV)
RTSE
silicon films
silicon homoepitaxy
TEM

Cite this

@conference{3f4569c5a1ff4655a011aea8d996036b,

title = "Silicon Homoepitaxy Using Tantalum-Filament Hot-Wire Chemical Vapor Deposition",

keywords = "hot-wire chemical vapor deposition (HWCVD), photovoltaics (PV), RTSE, silicon films, silicon homoepitaxy, TEM",

author = "NREL",

year = "2005",

language = "American English",

pages = "177--182",

note = "Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium ; Conference date: 28-03-2005 Through 01-04-2005",

}

TY - CONF

T1 - Silicon Homoepitaxy Using Tantalum-Filament Hot-Wire Chemical Vapor Deposition

AU - NREL, null

PY - 2005

Y1 - 2005

KW - hot-wire chemical vapor deposition (HWCVD)

KW - photovoltaics (PV)

KW - RTSE

KW - silicon films

KW - silicon homoepitaxy

KW - TEM

M3 - Paper

SP - 177

EP - 182

T2 - Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium

Y2 - 28 March 2005 through 1 April 2005

ER -