Silicon Materials Research on Growth Processes, Impurities, and Defects

    Research output: Contribution to conferencePaper

    Abstract

    Research progress on silicon crystal growth processes for photovoltaic applications and defect and impurity effects on PV performance is presented. Growth processes, in addition to thin-film silicon growth, include techniques for silicon-feedstock generation and a method for rapid, replenished Czochralski growth. We have produced research samples of silicon with low and very high dislocationdensities for collaborative research with other institutes, and have also made samples with varying amounts of incorporated nitrogen and oxygen, again, for collaborative studies with university researchers, concerning the effects of these impurities on mechanical strength. Transition-metal doping of silicon for understanding metallic impurity effects on lifetime and cell performance is ongoing.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2003
    EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
    Duration: 24 Mar 200326 Mar 2003

    Conference

    ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
    CityDenver, Colorado
    Period24/03/0326/03/03

    NREL Publication Number

    • NREL/CP-520-33575

    Keywords

    • crystal growth
    • defects
    • dislocation density
    • impurities
    • performance
    • photovoltaics (PV)
    • silicon

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