Abstract
Research progress on silicon crystal growth processes for photovoltaic applications and defect and impurity effects on PV performance is presented. Growth processes, in addition to thin-film silicon growth, include techniques for silicon-feedstock generation and a method for rapid, replenished Czochralski growth. We have produced research samples of silicon with low and very high dislocationdensities for collaborative research with other institutes, and have also made samples with varying amounts of incorporated nitrogen and oxygen, again, for collaborative studies with university researchers, concerning the effects of these impurities on mechanical strength. Transition-metal doping of silicon for understanding metallic impurity effects on lifetime and cell performance is ongoing.
Original language | American English |
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Number of pages | 7 |
State | Published - 2003 |
Event | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
Conference | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting |
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City | Denver, Colorado |
Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-33575
Keywords
- crystal growth
- defects
- dislocation density
- impurities
- performance
- photovoltaics (PV)
- silicon