Silicon Network Relaxation in Amorphous Hydrogenated Silicon

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    We have investigated nanovoid-free, low-defect-density, amorphous hydrogenated silicon, a-Si:H, with variable hydrogen content. We have observed reconstruction of all silicon-silicon bonds at temperatures as low as 430 degrees C, well below the crystallization temperature. This bond reconstruction leads to a decrease in thin-film thickness and an increase in material density, about 3% for thematerial with 9 at. % of hydrogen, during slow hydrogen outdiffusion. These results suggest that a long-range structural rearrangement of the silicon network can occur simultaneously with hydrogen motion and this has important consequences for all metastability models in amorphous hydrogenated silicon.
    Original languageAmerican English
    Pages (from-to)R12,710-R12,713
    JournalPhysical Review B
    Issue number20
    StatePublished - 1997

    NREL Publication Number

    • NREL/JA-520-24351


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