Silicon Quantum Dot Optical Properties and Synthesis: Implications for Photovoltaic Devices

Benjamin G. Lee, Bhavin N. Jariwala, Reuben T. Collins, Sumit Agarwal, Pauls Stradins

Research output: Contribution to conferencePaperpeer-review

Abstract

We study key optical properties for designing an absorber layer with silicon quantum dots (Si-QDs), including the absorptivity of the material, whether the character of the bandgap is direct or indirect, and the relation between absorption and photoluminescence. We report necessary synthesis conditions in order to control size, size distribution, and crystallinity of Si-QDs. This is important for applications of Si-QDs in photovoltaics [1,2], where they excite interest due to their size-tunable bandgap [3], potentially cheap fabrication, and possible enhancement of solar energy conversion efficiency through mechanisms such as multiple exciton generation [4].

Original languageAmerican English
Pages1827-1829
Number of pages3
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

NREL Publication Number

  • NREL/CP-520-47707

Keywords

  • photoluminescence
  • silicon quantum dots
  • solar cells

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