Abstract
We report two investigations conducted by using photoconductivity decay lifetime measurement. The first is crystalline silicon (c-Si) surface passivation using quinhydrone/methanol (QM) for bulk minority-carrier lifetime measurement. QM shows great promise as a substitute for iodine-based solutions because of its superior stability and minimized surface-recombination velocity in silicon. Thesecond is interface passivation in an amorphous silicon (a-Si)/c-Si heterojunction structure as a parallel effort to develop and optimize heterojunction c-Si solar cells by hot-wire chemical vapor deposition (HWCVD). A thin buffer layer inserted between the a-Si and the c-Si substrate has been found to be much more effective than a directly deposited a-Si/c-Si interface in reducing the interfacerecombination velocity.
| Original language | American English |
|---|---|
| Number of pages | 8 |
| State | Published - 2003 |
| Event | 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Vail, Colorado Duration: 10 Aug 2003 → 13 Aug 2003 |
Conference
| Conference | 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes |
|---|---|
| City | Vail, Colorado |
| Period | 10/08/03 → 13/08/03 |
NREL Publication Number
- NREL/CP-520-34628
Keywords
- amorphous silicon [(a-si)/c-si]
- crystalline silicon (x-Si) (c-Si)
- heterojunctions
- interface recombination velocity
- iodine-based solutions
- photoconductivity
- photovoltaics (PV)